Hydrogen Silsesquioxane Resist
AQM has developed a convenient and versatile method to synthesize an electronic grade of silsesquioxane-based (comprised of silicon and oxygen core, H-SiOx) resin. This class of polymer/resin is a very efficient negative photo- and electron-beam resist for nanolithography device fabrication. Our H-SiOx brand polymers have optimum molecular weight to make a homogenous solution in common organic solvents (e.g., toluene and methyl isobutyl ketone) for thin-film fabrication. Depending on the film thickness, a dense pattern with sub-10 nm half-pitch can be achieved. Our quality control process, packaging, and storage ensures that H-SiOx has a long shelf-life that maintains its contrast performance over time.
Contact us for purchasing options including customized resist formulations, developers or modifying the silsesquioxane with different terminal functional groups to incorporate controlled doping.
Our H-SiOx brand high purity resist has a long shelf-life and allows for the incorporation of dopants to achieve custom semiconductor resist formulations.
Fresnel Zone Plate made by H-SiOx, courtesy of Applied NanoTools Inc.
H-SiOx is a versatile resist capable of a wide range of features from <7 nm for NEMS to as large as 2.2 µm for MEMS.
"E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life", Journal of Vacuum Science & Technology B 37, 021601 (2019); https://doi.org/10.1116/1.5079657
17295 Boot Jack Rd, Suite A,
PO Box 267 Ridgway, Pennsylvania
Tel: 1 (814) 772-6603
Room 118, Building 1No. 12 Jiancaichengzhong Road, XisanqiHaidian District, Beijing, 100096
Tel: +44 (0) 1625 704465
MY Building 2 & 3F, 1-2-14
The wet etching of HSQ uses aqueous solutions of hydroxide containing salts, such as tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). AQM now provides HSQ developers for your nanolithography needs.