AQM has developed a convenient and versatile method to synthesize an electronic grade of silsesquioxane-based (comprised of silicon and oxygen core, H-SiOx) resin. This class of polymer/resin is a very efficient negative photo- and electron-beam resist for nanolithography device fabrication. Our H-SiOx brand polymers have optimum molecular weight to make a homogenous solution in common organic solvents (e.g., toluene, n-butyl acetate and methyl isobutyl ketone) for thin-film fabrication. Depending on the film thickness, a dense pattern with sub-10 nm half-pitch can be achieved. Our quality control process, packaging, and storage ensures that H-SiOx has a long shelf-life that maintains its contrast performance over time.

Contact us for purchasing options including customized resist formulations, developers or modifying the silsesquioxane with different terminal functional groups to incorporate controlled doping.